The silicon carbide market is estimated to expand at a CAGR of 7.5% over the forecasted period. During this projection era, it is expected that the silicon carbide market share would increase from its current valuation of US$ 2.8 billion in 2022 to a net worth of US$ 5.8 billion by 2032.

Carborundum is another term for silicon carbide. It is anticipated that silicon carbide will replace other silicon-based semiconductors and transistors on the market because it helps the system reduce size and power loss by 50%.

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Silicon Carbide Market: Drivers and Limitations

Various factors such as the increase in demand for motor drives, compact system size and the increase in the use of silicon carbide in cellular base station and radio frequency devices are some of the factors driving the growth of the silicon carbide market during the forecast period. .

Silicon carbide reduces power system loss by 50% due to increased adoption of compact size semiconductors in various applications such as Industrial Motor Driver, Power Supply and Inverter, Lighting Control and others.

On the other hand, the price of silicon carbide ranges from about $800 to $2,000 per ton, which is very high compared to other alternatives available in the market.

Therefore, the high cost of silicon carbide is the most important factor hindering the growth of the market. In addition, material defects and packaging related issues are the other challenge faced by vendors associated with the silicon carbide market.

Global Silicon Carbide Market: Competitive Environment

Silicon Carbide Market’teki önde gelen oyunculardan baz?lar? aras?nda Pilegrowth Tech SRL, Ascatron AB, United Silicon Carbide, Inc., Basic 3C, Inc., Toshiba Corporation, Bruckewell Technology Corporation, Tankeblue Semiconductor Co. Ltd., Central Semiconductor Corporation, Stmicroelectronics bulunmaktad?r. NV, Cree Inc. (Wolfspeed), DOW Corning Corporation, Sanken Electric Co.,Ltd., Fuji Electric Co., Ltd., Saint-Gobain Silicon Carbide, General Electric, Rohm Semiconductor, Genesic Semiconductor Inc., Global Power Technologies Group , Renesas Electronics Corporation, Graphensic AB, On Semiconductor, Infineon Technologies AG, Norstel AB, Microsemi Corporation ve Monolith Semiconductor Inc.

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Global Silicon Carbide Market: Market Segmentation

The Global Silicon Carbide Market can be divided into five segments by Product, Wafer size, Application, Vertical application and Region.

Segmentation by Product for the Silicon Carbide Market:

  • Silicon Carbide bare die
  • Silicon Carbide split devices
  • Silicon Carbide module
  • Silicon Carbide Diode
  • Silicon Carbide MOSFET

Segmentation by Wafer size for the Silicon Carbide Market:

  • 2 inches
  • 4 inches
  • 6 inches
  • more than 6 inches

Segmentation on the Basis of Application to the Silicon Carbide Market:

  • Electronic Warfare System
  • RF Device and Cellular Base Station
  • Solar and Wind Energy
  • Power Mains Device
  • flame detector
  • Flexible AC Transmission Systems (FACTS)
  • EV Charge
  • EV Motor Driver
  • High Voltage, Direct Current (HVDC)
  • Industrial Motor Driver
  • Power Supply and Inverter
  • Lighting control
  • Others

Segmentation by End User for Silicon Carbide Market:

  • power electronics
  • Telecommunication
  • Automotive
  • energy power
  • Defense
  • Renewable Energy Generation
  • Others

By Region:

  • North America
  • Latin America
  • Asia Pacific
  • MEA
  • Europe

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