The global dynamic random access memory (DRAM) market is anticipated to increase at a CAGR of 5% from 2022 to 2032, reaching US$ 10.3 billion. By the end of 2022, it is anticipated to surpass the US$ 6.9 billion mark. The fast global uptake of personal computing devices is probably going to drive up the price of DRAM in the near future.
Located in the vicinity of the processor makes this type of memory much faster than other types of conventional storage options such as hard disk and CD-ROM. Dynamic random access memory is a type of RAM that chips on a circuit board that needs to be refreshed every few milliseconds.
It stores each bit of data on a distinct passive electronic component present inside an integrated circuit board consisting of transistors and capacitors that make dynamic random access memory chip an efficient component to store data in memory as it requires less physical space to store the same amount of data than if it were to be stored statically.
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Computer hardware manufacturers are emphasizing developing new products with better performance and enhanced functionality such as minimum latency and maximum performance in order to capture a greater market share and attract more end users. Random access memory (RAM) is the place in devices where the operating system, data in current use, and application programs are kept to facilitate quick access by the device processor.
Also, relatively less manufacturing cost than static RAM makes dynamic random access memory more preferable to be integrated with devices like computers and mobile phones.
Dynamic Random Access Memory (DRAM) Market: Regional Outlook
The dynamic random access memory market is expected to witness a healthy CAGR during the projected period due to the increasing popularity of mobile devices across emerging countries like India, China, and Brazil. Asia Pacific is the dominating region in the dynamic random access memory market and is expected to remain dominant followed by North America during the forecast period. The Middle East & Africa region is expected to reflect the highest CAGR during the forecast period.
Dynamic Random Access Memory (DRAM) Market: Drivers
The demand for high-performance and low-power DRAM in mobile devices promises significant growth opportunities for the dynamic random access memory market. The growing penetration of smartphones in developing countries such as India, China, and Indonesia is expected to drive the growth of the dynamic random access memory market.
Furthermore, the introduction of new devices in the computing field such as hybrid devices and ultra-thin notebooks which offer high battery life and robust performance backed by dynamic RAM are further expected to fuel the growth of the dynamic random access memory market during the projected period. However, the emergence of substitutes such as NAND flash is expected to hinder the growth of the dynamic random access memory market amidst the forecast period.
Leading Key Players:
The key vendors in the dynamic random access memory market include SK Hynix Inc., Micron Technology Inc., SamsungElectronics Co. Ltd., Nanya Technology Corporation, Winbond Electronics Corporation, Powerchip Technology Corporation, Intel Corporation, Texas Instruments, and others. Major players in the dynamic random access memory market follow the strategy of introducing cost-effective solutions to gain a competitive edge. In addition, collaborating with major mobile device manufacturers is the other strategy being followed by the dynamic random access memory providers to outperform competitors.
Dynamic Random Access Memory (DRAM) Market Segmentation:
By Architecture:
- DDR2
- DDR5
- DDR4
- DDR3
- Others
By Application:
- Automotive
- Smartphones/Tablets?
- Consumer Products?
- Graphics
- Datacenter
- PC/Laptop
- Other Applications
By Region:
- North America
- Latin America
- Western Europe
- Eastern Europe
- APEJ
- Japan
- Middle East and Africa
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