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The Japan GaN Power Devices Market has exhibited remarkable growth, boasting a CAGR of 17.8% from 2012 to 2016. This trend is set to continue, with expectations of a soaring CAGR of 23.1% from 2017 to 2027. In 2017, the market value surpassed US$100 million, and projections indicate it will surge to over US$800 million by the …
Continue reading “GaN Power Devices Market Soars with 23.1% CAGR, Reaching US$ 800 Million by 2027”
The Japan GaN Power Devices Market has exhibited remarkable growth, boasting a CAGR of 17.8% from 2012 to 2016. This trend is set to continue, with expectations of a soaring CAGR of 23.1% from 2017 to 2027. In 2017, the market value surpassed US$100 million, and projections indicate it will surge to over US$800 million by the …
Continue reading “GaN Power Devices Market Soars with 23.1% CAGR, Reaching US$ 800 Million by 2027”
The Japan GaN Power Devices Market has exhibited remarkable growth, boasting a CAGR of 17.8% from 2012 to 2016. This trend is set to continue, with expectations of a soaring CAGR of 23.1% from 2017 to 2027. In 2017, the market value surpassed US$100 million, and projections indicate it will surge to over US$800 million by the …
Continue reading “GaN Power Devices Market Soars with 23.1% CAGR, Reaching US$ 800 Million by 2027”
Gallium Nitride (GaN) is the material, which is used for the manufacturing of semiconductor power devices as well as light emitting diodes and RF components. GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, analog applications and RF. A report triggered by Future Market Insights (FMI) states that …
Continue reading “GaN Power Devices Market is expected to exhibit a CAGR of 23.1% from 2017–2027”
