The substance used in the production of semiconductor power devices, light-emitting diodes, and RF components is gallium nitride (GaN). GaN has shown that it is capable of replacing silicon semiconductors in RF, analogue applications, and power conversion. According to a Future Industry Insights (FMI) analysis, a number of lucrative open doors in the market have caused some expanding and mid-level vendors to be squeezed out of the global GaN power devices market. The report predicts that the market for GaN devices will grow at a double-digit CAGR during the assessment period (2017-2027).
Japan to Remain Dominant in Global GaN Power Devices Market
The major buyer of devices from businesses throughout the world is the hardware sector in Japan. With a large income share, semiconductor demand is high, and GaN power devices are becoming more and more efficient and low capacitance, nearly reducing energy losses during charging and discharging. The market will pick up steam as a result of this aspect increasing demand for GaN products.
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GaN has wide application as a part in transistors and due to its enhanced properties, for instance, high warm conductivity, high voltage potential, substantial basic fields, these gadgets deliver high exchanging frequencies and better power thickness empowering transistors tofre work at high voltage levels. Such type of transistors have many uses in various in different fields and provide better outcomes, this is another driving factor influencing growth of the market. A best example for it is- a IT gear producing organization situated in Japan, Fujitsu Limited, in Jan 2016, built up a GaN high-portability transistor power developer with significant yield execution of the world for wideband remote broadcasts, that was 1.8X more noteworthy than some time recently, permitting over 30% more prominent range foe a fast remote system.
In charge of the growth of the Japanese market for GaN power devices, increasing the development work activities in GaN substrate. The demand for GaN power devices has been increasing due to GaN innovation features like scaling down, high breakdown voltage, and high exchanging recurrence. Continuous study has been completed by inquiries of Japanese centres and incremental GaN competencies. Additionally, a team of experts from Tokyo University’s Institute of Industrial Science recently made another advancement in the production of GaN LEDs on crystal substrates. With the application of this technology, fabrication costs as well as the actuation of OLED light boards can be reduced.
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Restraints
However, shrinking path of the semiconductor is the key factor that is limiting the growth of the GaN power devices market. Problems associated with present assembly and interconnect technologies are growing with expanding high current density in GaN devices. The major problem consist of low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip requiring more chip temperature and better thermal interconnects. The requirement for handling present densities per package and the similar heat flow generating by smaller footprints to be removed from the ambient atmosphere is also increasing. Such factors are anticipated to remain key challenge for growth of GaN market in Japan region.
Competitive Landscape
Several leading players operating in the market that are profiled in the report include Texas Instruments Incorporated, Qorvo, Inc., Infineon Technologies AG, Toshiba Corporation, Panasonic Corporation, and NXP Semiconductors N.V. The market is anticipated to witness section of acute number of GaN power gadget sellers in foreseeable period, increasing the opposition. Some other prominent players in the market, that have huge contribution in the growth of the market are POWDEC, GaN Systems Inc., Wolfspeed, Inc., EXAGAN,Transphorm Inc., AIXTRON SE, STMicroelectronics, IQE PLC, and Efficient Power Conversion Corporation.
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Market segmentation
By Technology
- 4H-SiC MOSFET
- HEMT
- Others
By Wafer Material
- GaN SiC
- GaN Si
By Wafer Size
- Less than 150mm
- 150mm-500mm
- More than 500 mm
By Industry
- Consumer Electronics
- Energy & Utilities
- Automotive
- IT & Telecom
- Others
By Region
- North America
- Latin America
- Europe
- Asia Pacific
- Middle East & Africa (MEA)
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